pa ra m et er sy m bo l un it max. repetitive peak reverse voltage max. continuous reverse voltage max. rms voltage maximum instantaneous forward voltage at i f =1.0a max. forward surge current, 8.3ms single half sine-wave superimposed on rated load (jedec method) max.reverse current v r =v rrm t j =25c t yp. thermal resistance (junction to case) t yp. diode junction capacitance (note 1) reverse v oltage: 20 to 150 v olts forward current: 1.0 amp rohs device d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) cdbmh120-g thru. cdbmh1 150-g page 1 qw -bb038 smd schottky barrier rectifiers rev :a comchip t echnology co., l td. sod-123t 0.154(3.9) 0.138(3.5) 0.012(0.3) t yp. 0.071(1.8) 0.055(1.4) 0.067(1.7) 0.051(1.3) 0.039(1.0) 0.094(2.4) v rrm v r v rms i o v f i fsm i r r jc c j t j cdbmh 120-g cdbmh 140-g cdbmh 160-g cdbmh 180-g cdbmh 1 150-g 20 20 14 40 40 28 60 60 42 1.0 0.70 30 0.2 10 45 80 80 56 100 100 70 v v v a v a ma c/w 0.50 0.85 note : operating temperature storage temperature range t stg -65 to +175 c -55 to +125 -55 to +150 120 pf cdbmh 130-g 30 30 21 cdbmh 150-g 50 50 35 0.079(2.0) 0.024(0.6) 0.008(0.20) t yp. 0.044(1.10) 0.028(0.70) 0.035(0.9) 0.063(1.6) 0.047(1.2) 0.020(0.5) 0.037(0.95) 0.030(0.75) 0.051(1.3) 0.035(0.9) 0.024(0.6) t yp. 1. f=1mhz and applied 4v dc reverse voltage v r =v rrm t j =100c i r cdbmh 1 100-g 150 150 105 max. averaged forward current (see fig.1) 0.92 c features - batch process design , excellent power dissipation of fers better reverse leakage current and thermal resistance . - low profile surface mounted application in order to optimize board space . - low power loss , high ef ficiency . - high current capability , low forward voltage drop . - high surge capability . - guardring for overvoltage protection . - ultra high - speed switching . - silicon epitaxial planar chip , metal silicon junction . - lead - free parts meet environmental standards of mil - std -19500 /228 mechanical data case: sod-123t/ mini sma. molded plastic. - - t erminals: plated terminals, solderable per mil-std-750, method 2026. polarity: indicated by cathode band. - - w eight: 0.018 gram(approx.). mounting position: any - - heat sink bottom . maximum ratings (at t a =25c unless otherwise noted)
page 2 qw -bb038 rev :a comchip t echnology co., l td. rating and characteristic curves (cdbmh120-g thru. cdbmh1 150-g) fig.2 - t ypical forward characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) forward v oltage, (v) 0 . 1 fig.5 - t ypical reverse characteristics r e v e r s e l e a k a g e c u r r e n t ( m a ) percent of rated peak reverse v oltage, (%) 0 1 2 0 2 0 0 fig.4 - t ypical junction capacitance 0 j u n c t i o n c a p a c i t a n c e ( p f ) reverse v oltage, (v) 1 5 0 3 5 0 0 . 0 1 1 0 . 0 1 1 0 1 0 0 1 . 5 1 0 0 fig.1- t ypical current derating curve a v e r a g e f o r w a r d c u r r e n t , ( a ) 0 . 1 0 . 0 1 1 1 0 1 0 0 0 . 1 0 . 3 0 . 9 1 . 1 5 0 2 0 0 3 0 0 4 0 8 0 1 6 0 1 o t j =75 c o t j =25 c 0 . 5 0 . 1 1 0 1 0 0 2 5 0 fig.3 - maximum non-repetitive forward surge current 0 p e a k f o r w a r d s u r g e c u r r e n t , ( a ) number of cycles at 60hz 3 3 0 0 1 1 0 1 0 0 1 2 2 4 6 1 8 o t j =25 c 8.3ms single half sine wave, jedec method smd schottky barrier rectifiers f=1mhz applied 4vdc reverse voltage t j =25c pulse width 300 us 1% duty cycle 0 . 7 1 . 3 ambient t emperature, (c) 0 0.6 0.8 0 100 175 0.2 1.2 0.4 25 50 75 150 125 1.0 c d b m h 1 2 0 - g ~ c d b m h 1 4 0 - g c d b m h 1 5 0 - g ~ c d b m h 1 1 5 0 - g c d b m h 1 8 0 - g ~ c d b m h 1 1 5 0 - g c d b m h 1 5 0 - g ~ c d b m h 1 6 0 - g c d b m h 1 2 0 - g ~ c d b m h 1 4 0 - g
page 3 rev :a comchip t echnology co., l td. smd schottky barrier rectifiers qw -bb038 b c d d d 2 d 1 m i n i - s m a / s o d - 1 2 3 t s y m b o l a ( m m ) ( i n c h ) 2 . 4 4 0 m i n . 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 6 2 . 0 m i n . 1 3 . 0 0 . 5 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 8 . 0 0 0 . 3 0 1 1 . 4 0 1 . 0 1 7 8 2 . 0 0 0 . 0 5 9 0 . 0 0 4 7 . 0 0 8 0 . 0 7 9 0 . 5 1 2 0 . 0 2 0 s y m b o l ( m m ) ( i n c h ) 0 . 3 1 4 0 . 0 1 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 4 4 9 0 . 0 3 9 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 1 0 0 . 1 3 8 0 . 0 0 4 m i n i - s m a / s o d - 1 2 3 t 1 . 9 0 0 . 1 0 0 . 0 7 5 0 . 0 4 3 . 9 0 0 . 1 0 0 . 1 5 3 0 . 0 4 1 . 6 8 0 . 1 0 0 . 0 6 6 0 . 0 4 0 . 2 3 0 . 1 0 0 . 0 0 9 0 . 0 0 4 t reel t aping specification o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d 1 d 2 w 1 direction of feed i n d e x h o l e d e f b w p p 0 p 1 a t c d
suggested p ad layout part number 12 marking code marking code e c e d cdbmh120-g xx page 4 rev :a comchip t echnology co., l td. smd schottky barrier rectifiers qw -bb038 cdbmh140-g cdbmh160-g cdbmh180-g 14 16 18 size (inch) 0.040 (mm) 1.00 1.00 1.70 0.040 0.067 0.50 0.020 e 1.50 0.060 b c d a m i n i - s m a / s o d - 1 2 3 t cdbmh150-g 15 cdbmh130-g 13 g b f i h a 1.10 0.90 0.044 0.035 0.85 0.033 i 0.60 0.024 f g h cdbmh1 100-g 10 xx / xxx = product type marking code pinning information pin simplified outline symbol 1 2 pin 1 cathode pin 2 anode 2 1 cdbmh1 150-g 1 15 standard packaging c a s e t y p e 2 , 5 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k m i n i - s m a / s o d - 1 2 3 t
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